北京高压科学研究中心
Center for High Pressure Science &Technology Advanced Research

Feng Ke

Postdoc

E-mail:  kefeng@hpstar.ac.cn

             f_ke00712@163.com



Education

2010-2015   Ph. D, Condensed matter physics, Jilin University

2002-2006   B. S.,  Harbin Normal University

Research  Interests

  • Low-dimensionalmaterials at extreme conditions

  • Ultra-highpressure electrical transport measurements


Publications

1.       FengKe, Qinglin Wang and Chunxiao Gao et.al.,Anomalous variation of electrical transport properties and amorphization indense Alq3. RSC advances 5, 41359, 2015.

2.       FengKe,Cailong Liu, Junkai Zhang and ChunxiaoGao, et. al., Interlayer-glide-driven isosymmetric phase transition in compressed In2Se3.Appl. Phys. Lett. 104, 212102, 2014.

3.       FengKe, Jie Yang, Cailong Liu and Chunxiao Gaoet. al., High-Pressure Electrical-Transport Properties of SnS: Experimental andTheoretical Approaches. J. Phys.Chem. C 117, 6033, 2013.

4.       Yabin Chen, Feng Ke et. al, pressure-temperaturephase diagram of vanadium dioxide. Nano Lett. DOI: 10.1021/acs.nanolett.7b00233,2017. (Contributed equally).

5.       Yabin Chen, Feng Ke et. al., Pressurizing Field-Effect Transistors ofFew-Layered MoS2. Nano Lett.17, 194, 2017. (Contributed equally).

6.       Xiaoling Zhou,… Feng Ke, Bin Chen et. al., GrainRotation at the Nanoscale, Phys. Rev. Lett. 118, 096101, 2016.

7.    Jiejuan Yan, Feng Ke andChunxiao Gao et. al., Pressure-driven semiconducting -semimetallic transitionin SnSe. Phys. Chem. Chem. Phys. 18, 5012, 2016.

8.       ChunyuLi, Feng Ke and Hao Yan et. al.,Correlated structural and electronic phase transformations in transition metalchalcogenide under high pressure. J. Appl. Phys. 119, 135901, 2016.

9.       Yabin Chen, ShuaiZhang, Feng Ke et. al.,Pressure-induced structural transition of CdxZn1-xO.Appl. Phys. Lett. 108, 152105, 2016.

10.    NanaLi, Bouchaib Manoun, Lingyun Tang, FengKe, Wenge Yang, Inorg. Chem. 55, 6770, 2016.

11.  Jiejuan Yan, Feng Ke and Chunxiao Gao et. al., Electrical transport propertiesof AlAs under pressure: reversible boundary effect. Phys. Chem. Chem. Phys. 17,26277, 2015.

12.  Li Wang, FengKe and Chunxiao Gao et. al., Effect of crystallization water on thestructural and electrical properties of CuWO4 under high pressure. Appl.Phys. Lett. 107, 201603,2015.

13.    Haiwa Zhang, Feng Ke and Chunxiao Gao et. al., Anomalous Structural Transitionand Electrical Transport Behaviors in Compressed Zn2SnO4:Effect of Interface. Sci. Rep. 5, 14417, 2015.

14.    Wen Fan, Xi Zhu, Feng Ke and Bin Chen et. al., Vibrational spectrum renormalizationby enforeced coupling across the van der Waals gap between MoS2 andWS2 monolayers. Phys. Rev. B 92, 241408(R), 2015.

15.    Xin Zhang, Junkai Zhang, Feng Ke and Chunxiao Gao, et al. Anomalous semiconducting behavioron VO2 under high pressure. RSCadvances 5, 54843, 2015.

16.    YuqiangLi, Yang Gao…, Feng Ke, ChunxiaoGao, Metallization and Hall effect of Mg2Ge under high pressure. Appli. Phys.Lett. 107, 142103, 2015.

17.  Junkai Zhang,Yonghao Han, Cailong Liu, Feng Ke, et al., Semiconductor-to-metal transition of Bi2Se3 under high pressure. Appl.Phys. Lett. 105, 062102,2014.

18.  Junkai Zhang, Cailong Liu, Xin Zhang, Feng Ke, et al.,Electronic topological transition and semiconductor-to-metal conversion of Bi2Te3under high pressure. Appl. Phys. Lett. 103, 052102,2013.

19.  Junkai Zhang, Cailong Liu, Xin Zhang, Feng Ke, et al., Impurity levelevolution and majority carrier-type inversion of Ag2S under extremecompression: Experimental and theoretical approaches. Appl.Phys. Lett. 103, 082116,2013.