Dr. Avinash Nayak [The University of Texas at Austin, USA]

Title:   Tuning Structural, Vibrational, and Electronic Properties of Two-Dimensional Materials using Hydrostatic Pressure

Time:   2:00 - 3:00 PM, July 20, 2015, Monday

Place: Conference room 201, Build 6, HPSTAR (Shanghai)

Abstract:

Controlling the band gap by tuning the lattice structure through pressure engineering is a relatively new route for tailoring the optoelectronic, structural, and electronic properties of two dimensional (2D) materials. We investigate the electronic and lattice vibrational dynamics of graphene and several of several transition metal dicolcogenide (TMD) materials via a diamond anvil cell (DAC) and density functional theory (DFT) calculations. Applying hydrostatic pressure onto 2D materials such as MoS2, MoSe2, MoWS2, WS2, and WSe2 allows for semiconductor to metal transitions, bandgap opening, and drastic doping effects. This pressure tuned behavior can enable the development of novel devices with multiple phenomena involving the strong coupling of the mechanical, electrical and optical properties of layered nanomaterials.

Biography of the Speaker:

Dr. Avinash Nayak’s research focuses on the study of the structure and properties of materials under high pressure with first-principles calculation and simulations. Currently Avinash’s research interests include:

●  Crystal structure and optical studies of two dimensional materials.

●  Electrical measurements of transition metal dichalcogenides under high pressures.

●  Theoretical simulations of the semiconductor to metal transition.

Education

●  PhD Electrical Engineering, 2015, University of Texas, Austin

●  MS Electrical and Material Science, 2011, University of California, Davis